arf300 125v, 300w, 45mhz the arf300 is a n-channel rf power transistor in a high ef ciency angeless package. it is designed for high voltage operation in narrow band ism and mri power ampli ers at frequencies up to 45mhz. the transistor is well matched to the arf301 p-channel rf power transistor making the pair well suited for bridge con gurations ? high performance ? high voltage breakdown and large soa for superior ruggedness ? low thermal resistance. ? capacitance matched with arf301 p-channel symbol parameter ratings unit v dss drain-source voltage 500 v v dgo drain-gate voltage 500 i d continuous drain current @ t c = 25c 24 a v gs gate-source voltage 30 v p d total power dissipation @ t c = 25c 1000 w t j , t stg operating and storage junction temperature range -55 to 175 c t l lead temperature: 0.063? from case for 10 sec. 300 maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 500 v v ds(on) on state drain voltage 1 (i d(on) = 12a, v gs = 10v) 3 4 i dss zero gate voltage drain current (v ds = v dss , v gs = 0v) 25 a zero gate voltage drain current (v ds = 50v dss , v gs = 0, t c = 125c) 250 i gss gate-source leakage current (v ds = 30v, v ds = 0v) 100 na g fs forward transconductance (v ds = 15v, i d = 12a) 5 8 mhos v gs(th) gate threshold voltage (v ds = v gs , i d = 10ma) 2.5 4 5 volts microsemi website - http://www.microsemi.com 050-4948 rev b 9-2010 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. rf power mosfet n-channel enhancement mode ? speci ed 125 volt, 27 mhz characteristics: output power = 300 watts. gain = 15db (class e) ef ciency = 80% ? rohs compliant symbol parameter min typ max unit r jc junction to case 0.15 c/w r jhs junction to sink (high ef ciency thermal joint compound and planar heat sink surface.) 0.27 thermal characteristics
1 10 100 1 10 100 1000 arf300 dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 1890 2100 pf c oss output capacitance v ds = 50v 350 390 c rss reverse transfer capacitance f = 1mhz 75 90 functional characteristics symbol characteristic test conditions min typ max unit g ps common source ampli er power gain f = 27mhz i dq = 0ma v dd = 125v p out = 300w 15 17 db drain ef ciency 80 85 % electrical ruggedness vswr 10:1 no damage 1. pulse test: pulse width < 380 s, duty cycle < 2%. microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4948 rev b 9-2010 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 3, typical maximum safe operating area t c =+25c t j =+175c single pulse operation here limited by r ds (on) 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 50 100 150 200 250 300 capacitance v ds , drain-to-source voltage (volts) figure 1, typical capacitance vs. drain-to-source voltage c iss c oss c rss 0 10 20 30 40 50 60 2 4 6 8 10 v gs , gate-to-source voltage (volts) figure 2, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = +125c t j = +25c dynamic characteristics id max bvdss line rds on pd line 1ms 100ms 100? 10ms
0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10 -4 10 -3 10 -2 10 -1 0.1 1 0 10 20 30 40 50 60 0 5 10 15 20 25 30 dynamic characteristics 050-4948 rev b 9-2010 arf300 v ds , drain-to-source voltage (volts) figure 5, typical output characteristics i d , drain current (amperes) 6.5v 5.5v 6v 10v 7.5v 8v single pulse rectangular pulse duration (seconds) figure 6a, maximum effective transient thermal impedance, junction-to-case vs pulse duration t c , case temperature (c) figure 4, typical threshold voltage vs temperature v gs(th) , threshold voltage figure 6b, transient thermal impedance model table 1 - typical class ab large signal input - output impedance freq. (mhz) z in ( )z ol ( ) 2.0 13.56 27.12 40.68 18 - j 10.5 2.66 - j 4.6 1.79 - j 1.6 1.68 - j 0.14 21 - j 1.4 17.5 - j 7.8 11.7 - j 10.4 7.7 - j 10 z in - gate shunted with 25 i dq = 0 z ol - conjugate of optimum load for 300 watts output at v dd =125v dissipated power (watts) t j (?c) t c (?c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext 0.068 0.062 0.019 0.0150 0.135 2.133 15v 0 1 2 3 4 5 6 7 8 -50 0 50 100 150 0.3 d = 0.9 0.7 0.5 0.1 0.05
arf300 050-4948 rev b 9-2010 1.141 0.009 0.140 x 6 0.100 x 4 0.16 0.980 0.507 0.963 0.890 0.257 r0.125 d 0.125 r0.050 0.135 0.237 0.04 t11 package outline microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. ss d ss g use 4-40 (m3) screws for mounting. torque = 4-6 in-lb (0.45- 0.7 nm). attention: this is a high power device. special considerations must be followed in mounting to ensure proper operation of these devices. incorrect mounting can cause internal temperatures to exceed the maximum allowable operating junction temperature. refer to microsemi application note #1810 before starting system design. http://www.microsemi.com/support/ micnotes/1810.pdf
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